tsb1412 low vcesat pnp transistor 1/4 version: b11 to - 252 (dpak) product summary bv cbo -40v bv ceo -30v i c -5a v ce(sat) -0.5v @ i c / i b = -4a / -100ma features low v ce(sat) -0.36 @ i c / i b = -4a / -100ma (typ.) complementary part with tsd2118 ordering information part no. package packing tsb1412cp ro to-252 2.5kpcs / 13 reel tsb1412cp rog to-252 2.5kpcs / 13 reel note: g is denote halogen free product. structure epitaxial planar type pnp silicon transistor absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v collector current dc i c -5 a pulse -10 (note) collector power dissipation ta=25oc p d 1 w tc=25oc 10 operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: single pulse, pw=10ms electrical specifications (t a =25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = -50ua, i e = 0 bv cbo -40 -- -- v collector-emitter breakdown voltage i c = -1ma, i b = 0 bv ceo -30 -- -- v emitter-base breakdown voltage i e = -50ua, i c = 0 bv ebo -6 -- -- v collector cutoff current v cb = -25v, i e = 0 i cbo -- -- -0.5 ua emitter cutoff current v eb = -5v, i c = 0 i ebo -- -- -0.5 ua collector-emitter saturation voltage i c / i b = -4a / -100ma *v ce(sat) -- -0.36 -0.5 v dc current transfer ratio v ce = -2v, i c = -500ma *h fe 180 -- 390 transition frequency v ce =-6v, i c =-50ma, f=30mhz f t -- 120 -- mhz output capacitance v cb = -20v, f=1mhz cob -- 60 -- pf * pulse test: pulse width 380us, duty cycle 2% pin definition : 1. base 2. collector 3. emitter
tsb1412 low vcesat pnp transistor 2/4 version: b11 electrical characteristics curve (t a =25 o c, unless otherwise noted) figure 1. dc current gain figure 2. v ce(sat) v.s. ic figure 3. v be(sat) v.s. ic figure 4. output characteristics figure 5. output characteristics figure 6. power derating curve
tsb1412 low vcesat pnp transistor 3/4 version: b11 to-252 mechanical drawing to-252 dimension dim millimeters inches min max min max a 2.290 bsc 0.090 bsc a1 4.600 bsc 0.180 bsc b 7.000 7.200 0.275 0.283 c 6.000 6.200 0.236 0.244 d 6.400 6.604 0.252 0.260 e 2.210 2.387 0.087 0.094 f 0.010 0.127 0.000 0.005 g 5.232 5.436 0.206 0.214 g1 0.666 0.889 0.026 0.035 g2 0.633 0.889 0.025 0.035 h 0.508 ref 0.020 ref i 0.900 1.500 0.035 0.059 j 2.743 ref 0.108 ref k 0.660 0.940 0.026 0.037 l 1.397 1.651 0.055 0.065 m 1.100 ref 0.043 ref
tsb1412 low vcesat pnp transistor 4/4 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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